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 NTE2313 Silicon NPN Transistor High Speed Switch
Description: The NTE2313 is a high-voltage, high-speed, glass-passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems, and switching applications. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Reverse Base Current, -IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 100mA, L = 25mH ICES IEBO VCS = 1000V VCS = 1000V, TC = +125C Emitter Cutoff Current IC = 0, VEB = 5V 450 - - - - - - - - 0.2 1.5 1 V mA mA mA Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified)
Parameter ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) fT ton ts tf IC = 0.1A, VCE = 5V IC = 0.3A, IB = 30mA IC = 1A, IB = 200mA Base-Emitter Saturation Voltage Dynamic Characteristics Current-Gain Bandwidth Product Switching Characteristics Turn-On Time Storage Time Fall Time VCC = 250V, IC = 1A, IB1 = 0.2A, IB2 = 0.4A - - - 0.3 2.0 0.3 0.5 3.5 - s s s IC = 500mA, VCE = 10V, f = 1MHz 4 - - MHz IC = 1A, IB = 0.2A 30 - - - 50 - - - - 0.8 1.0 1.1 V V V Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
.420 (10.67) Max
.110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max
Base .100 (2.54)
Emitter Collector/Tab


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